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FDS8813NZ Datasheet

  • FDS8813NZ

  • N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5mohm

  • 319.64KB

  • 6頁(yè)

  • FAIRCHILD

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FDS8813NZ N-Channel PowerTrench
廬
MOSFET
March 2007
FDS8813NZ
N-Channel PowerTrench
廬
MOSFET
30V, 18.5A, 4.5m惟
Features
Max r
DS(on)
=
4.5m惟 at V
GS
= 10V, I
D
= 18.5A
Max r
DS(on)
=
6.0m惟 at V
GS
= 4.5V, I
D
=16A
HBM ESD protection level of 5.6kV typical (note 3)
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
RoHS compliant
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor鈥檚 advanced PowerTrench
廬
process that has
been especially tailored to minimize the on-state resistance.
D
D
D
D
G
S
S
Pin 1
S
D
S
D
D
S
S
D
G
SO-8
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 4)
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
30
鹵20
18.5
74
337
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
擄C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
擄C/W
Package Marking and Ordering Information
Device Marking
FDS8813NZ
Device
FDS8813NZ
Reel Size
13鈥?/div>
Tape Width
12mm
Quantity
2500 units
漏2007 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C
1
www.fairchildsemi.com

FDS8813NZ 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 18.5A

  • 4.5 毫歐 @ 18.5A，10V

  • 3V @ 250µA

  • 76nC @ 10V

  • 4145pF @ 15V

  • 1W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • FDS8813NZTR

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