FDS8670 30V N-Channel PowerTrench
廬
MOSFET
September 2005
FDS8670
30V N-Channel PowerTrench
廬
MOSFET
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
21 A, 30 V
Max R
DS(ON)
= 3.7 m鈩?@ V
GS
= 10 V
Max R
DS(ON)
= 5.0 m鈩?@ V
GS
= 4.5 V
High performance trench technology for extremely low
R
DS(ON)
and gate charge
Minimal Qgd (5.5 nC typical)
100% R
G
tested (0.9
鈩?/div>
typical)
RoHS Compliant
Applications
鈥?/div>
High Efficiency DC-DC Converters:
鈥?/div>
Notebook Vcore Power Supply
鈥?/div>
Telecom Brick Synchronous Rectifier
鈥?/div>
Multi purpose Point Of Load
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation
Drain-Source Voltage
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵16
(Note 1a)
Units
V
V
A
W
21
105
2.5
1.2
1
鈥?5 to +150
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
Package Marking and Ordering Information
Device Marking
FDS8670
Device
FDS8670
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2005
Fairchild Semiconductor Corporation
FDS8670 Rev C (W)
FDS8670 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET N 通道，金屬氧化物
邏輯電平門
30V
21A
3.7 毫歐 @ 21A，10V
3V @ 250µA
82nC @ 10V
4040pF @ 15V
1W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SOICN
帶卷 (TR)
FDS8670TR
FDS8670相關(guān)型號(hào)PDF文件下載
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型號(hào)
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