餂?/div>
MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
鈥?6 A, 鈥?0 V. R
DS(ON)
= 7.2 m鈩?@ V
GS
= 鈥?0 V
R
DS(ON)
= 11.5 m鈩?@ V
GS
= 鈥?4.5 V
鈥?/div>
ESD protection diode (note 3)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
鈥?0
鹵25
(Note 1a)
Units
V
V
A
W
鈥?6
鈥?0
2.5
1.2
1
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
Package Marking and Ordering Information
Device Marking
FDS7779Z
Device
FDS7779Z
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?003
Fairchild Semiconductor Corporation
FDS7779Z Rev C1 (W)
FDS7779Z 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET P 通道，金屬氧化物
邏輯電平門(mén)
30V
16A
7.2 毫歐 @ 16A，10V
3V @ 250µA
98nC @ 10V
3800pF @ 15V
1W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SOICN
帶卷 (TR)
FDS7779Z相關(guān)型號(hào)PDF文件下載
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