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FDS7764S Datasheet

  • FDS7764S

  • 30V N-Channel PowerTrench SyncFET

  • 127.73KB

  • 7頁

  • FAIRCHILD

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FDS7764S
September 2002
FDS7764S
30V N-Channel PowerTrench
餂?/div>
SyncFET
鈩?/div>
General Description
The FDS7764S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS7764S includes
an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology.
Features
鈥?/div>
13.5 A, 30 V. R
DS(ON)
= 7.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 9.0 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (25 nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
and fast switching
鈥?/div>
High power and current handling capability
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor drives
D
D
D
D
5
6
4
3
2
1
SO8
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵16
(Note 1a)
Units
V
V
A
W
13.5
50
2.5
1.2
1.0
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
30
擄C/W
Package Marking and Ordering Information
Device Marking
FDS7764S
Device
FDS7764S
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?002
Fairchild Semiconductor Corporation
FDS7764S Rev D (W)

FDS7764S 產品屬性

  • 2,500

  • 分離式半導體產品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 13.5A

  • 7.5 毫歐 @ 13.5A，10V

  • 2V @ 1mA

  • 35nC @ 5V

  • 2800pF @ 15V

  • 1W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

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