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FDS7079ZN3 Datasheet

  • FDS7079ZN3

  • 30 Volt P-Channel PowerTrench MOSFET

  • 6頁

  • FAIRCHILD

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FDS7079ZN3
February 2004
FDS7079ZN3
30 Volt P-Channel PowerTrench
餂?/div>
MOSFET
General Description
Advanced P Channel MOSFET combined with
Advanced SO8 FLMP package providing a device with
extremely low thermal impedance and improved
electrical performance.
Applications for this device include multi-cell battery
protection and charging, including protection and load
switching in notebook computer and notebook battery
packs.
Features
鈥?/div>
鈥?6 A, 鈥?0 V. R
DS(ON)
= 7.5 m鈩?@ V
GS
= 鈥?0 V
R
DS(ON)
= 11.5 m鈩?@ V
GS
= 鈥?4.5 V
鈥?/div>
ESD protection diode (note 3)
鈥?/div>
ESD rating: 4kV
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
FLMP SO-8 package for enhanced thermal
performance in industry-standard package size
NC
D
NC
D
NC
D
NC
D
FLMP SO-8
D
Bottom Side Drain Contact
5
6
4
3
2
1
Pin 1
SO-
G
S G
S S
S S
S
T
A
=25 C unless otherwise noted
o
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
鈥?0
鹵25
(Note 1a)
Units
V
V
A
W
擄C
鈥?6
鈥?0
3.13
1.5
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
40
0.5
擄C/W
Package Marking and Ordering Information
Device Marking
FDS7079ZN3
餂?004
Fairchild Semiconductor Corporation
Device
FDS7079ZN3
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
FDS7079ZN3 Rev C1 (W)

FDS7079ZN3 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 16A

  • 7.5 毫歐 @ 16A，10V

  • 3V @ 250µA

  • 55nC @ 5V

  • 3630pF @ 15V

  • 1.5W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm Width）裸露焊盤

  • 8-SOIC

  • 帶卷 (TR)

  • FDS7079ZN3TRFDS7079ZN3_NLFDS7079ZN3_NLTRFDS7079ZN3_NLTR-ND

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