鈩?/div>
General Description
The FDS7064SN3 is designed to improve the efficiency
of Buck Regulators. Used as the Synchronous rectifier,
(Low side MOSFET), losses can be reduced, not only in
this device, but also in the Control switch, (High side
MOSFET). After the low side MOSFET turns off,
reverse recovery current in the body diode is dissipated
in the High Side device. A Discrete Schottky diode in
parallel with the Low Side MOSFET can lower the
reverse recovery current, but parasitic PCB and
Package Inductance reduce the effectiveness of the
TM
technology reduces this
Schottky. SyncFET
inductance to a minimum by providing a monolithic
solution (MOSFET and Schottky in the same die),
resulting in optimum performance.
鈥?/div>
Features
R
DS(ON)
= 8.0 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 9.5 m鈩?@ V
GS
= 4.5 V
鈥?/div>
16 A, 30 V
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
No inductance between MOSFET and Schottky
鈥?/div>
40% reduction in Body Diode Forward Voltage
鈥?/div>
Optimized to reduce losses in Synchronous Buck
Regulators
鈥?/div>
FLMP SO-8 package for enhanced thermal
performance.
Applications
鈥?/div>
Synchronous Rectifier
NC
D
NC
D
NC
D
NC
D
FLMP SO-8
D
5
6
Bottom-side
Drain Contact
4
3
2
1
Pin 1
SO-
G
S G
S S
S S
S
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵16
(Note 1a)
Units
V
V
A
W
擄C
16
60
3.13
1.5
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
40
0.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS7064SN3
餂?004
Fairchild Semiconductor Corporation
Device
FDS7064SN3
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
FDS7064SN3 Rev C1 (W)
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