鈩?/div>
General Description
The FDS6994S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6994S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild鈥檚 monolithic SyncFET technology.
Features
鈥?/div>
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
R
DS(on)
= 15.0 m鈩?@ V
GS
= 10V
R
DS(on)
= 17.5 m鈩?@ V
GS
= 4.5V
鈥?/div>
Q1:
Optimized for low switching losses
Low gate charge (8.0 nC typical)
R
DS(on)
= 21.0 m鈩?@ V
GS
= 10V
R
DS(on)
= 26.0 m鈩?@ V
GS
= 4.5V
8.2A, 30V
6.9A, 30V
D1
D1
D2
D2
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
S1
G2
8
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
T
A
= 25擄C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30
鹵16
6.9
20
2
1.6
1
0.9
鈥?5 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
鹵16
8.2
30
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6994S
Device
FDS6994S
Reel Size
13鈥?/div>
Tape width
12mm
Quantity
2500 units
餂?002
Fairchild Semiconductor Corporation
FDS6994S Rev B(W)
next