鈥?/div>
Q1:
Optimized for low switching losses
Low gate charge (8nC typical)
R
DS(on)
max= 31 m鈩?@ V
GS
= 10V
R
DS(on)
max= 40 m鈩?@ V
GS
= 4.5V
The FDS6984AS is designed to replace two single
SO-8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6984AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes a patented combination of a
MOSFET monolithically integrated with a Schottky
diode.
8.5A, 30V
5.5A, 30V
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25擄C unless otherwise noted
Parameter
Q2
30
鹵20
(Note 1a)
Q1
30
鹵20
5.5
20
2
1.6
1
0.9
鈥?5 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
8.5
30
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6984AS
FDS6984AS
漏2005
Fairchild Semiconductor Corporation
Device
FDS6984AS
FDS6984AS_NL
(Note 4)
Reel Size
13鈥?/div>
13鈥?/div>
Tape width
12mm
12mm
Quantity
2500 units
2500 units
FDS6984AS Rev A(X)
next