FDS6982
June 1999
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook
computers and other battery powered electronic devices.
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrench
TM
MOSFETs designed to maximize power
conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction (less than 20m鈩?/div>
at V
GS
= 4.5V).
Features
鈥?/div>
鈥?/div>
Q2: 8.6A, 30V. R
DS(on)
= 0.015
鈩?/div>
@ V
GS
= 10V
R
DS(on)
= 0.020
鈩?/div>
@ V
GS
= 4.5V
Q1: 6.3A, 30V. R
DS(on)
= 0.028
鈩?/div>
@ V
GS
= 10V
R
DS(on)
= 0.035
鈩?/div>
@ V
GS
= 4.5V
鈥?/div>
鈥?/div>
鈥?/div>
Fast switching speed.
Low gate charge (Q1 typical = 8.5nC).
High performance trench technology for extremely
low R
DS(ON)
.
Applications
鈥?/div>
Battery powered synchronous DC:DC converters.
鈥?/div>
Embedded DC:DC conversion.
D2
D2
D1
D1
G2
S2
5
6
7
Q1
4
3
2
Q2
SO-8
G1
S1
8
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Q2
30
鹵
20
8.6
30
2
1.6
1
0.9
-55 to +150
Q1
30
鹵
20
6.3
20
Units
V
V
A
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄
C
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄
C/W
擄
C/W
Package Marking and Ordering Information
Device Marking
FDS6982
漏1999
Fairchild Semiconductor Corporation
Device
FDS6982
Reel Size
13鈥?/div>
Tape Width
12mm
Quantity
2500 units
FDS6982, Rev. C
FDS6982相關型號PDF文件下載
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型號
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廠商
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