FDS6982S Datasheet

IC型號：
FDS6982S
PDF描述：
Dual Notebook Power Supply N-Channel PowerTrench Syn...
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257.86KB
PDF頁數(shù)：
12頁
芯片廠家：
FAIRCHILD

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FDS6982S

March 2000

PRELIMINARY

FDS6982S

Dual Notebook Power Supply N-Channel PowerTrench

餂?/div>

SyncFet

鈩?/div>

General Description

The FDS6982S is designed to replace two single SO-8

MOSFETs and Schottky diode in synchronous DC:DC

power supplies that provide various peripheral voltages

for notebook computers and other battery powered

electronic devices. FDS6982S contains two unique

30V, N-channel, logic level, PowerTrench MOSFETs

designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific

emphasis on reducing switching losses while the low-

side switch (Q2) is optimized to reduce conduction

losses. Q2 also includes an integrated Schottky diode

using Fairchild鈥檚 monolithic SyncFET technology.

Features

鈥?/div>

Q2:

Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

DS(on)

= 0.016鈩?@ V

= 10V

DS(on)

= 0.021鈩?@ V

= 4.5V

鈥?/div>

Q1:

Optimized for low switching losses

Low Gate Charge ( 8.5 nC typical)

DS(on)

= 0.028鈩?@ V

= 10V

DS(on)

= 0.035鈩?@ V

= 4.5V

8.6A, 30V

6.3A, 30V

SO-8

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

= 25擄C unless otherwise noted

Parameter

(Note 1a)

鹵20

6.3

1.6

0.9

-55 to +150

Units

- Continuous

- Pulsed

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Drain Current

鹵20

8.6

(Note 1a)

(Note 1b)

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range

擄C

Thermal Characteristics

胃JA

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

Package Marking and Ordering Information

Device Marking

FDS6982S

Device

FDS6982S

Reel Size

13鈥?/div>

Tape width

12mm

Quantity

2500 units

餂?999

Fairchild Semiconductor Corporation

FDS6982S Rev B(W)

標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
PowerTrench®
FET 型
2 個 N 溝道（雙）
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
6.3A，8.6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
28 毫歐 @ 6.3A，10V
Id 時的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
12nC @ 5V
輸入電容 (Ciss) @ Vds
2040pF @ 10V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)

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