鈻?/div>
5.5 A, 30 V.
General Description
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor鈥檚 advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
D2
D1
D1
D2
5
6
4
3
2
1
SO-8
Pin 1
S1
G1
S2
G2
7
8
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
胃
JA
R
胃
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
鹵
20
5.5
20
2
1.6
1
0.9
鈥?5 to 150
Units
V
V
A
W
擄
C
擄
C/W
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking
FDS6930B
Device
FDS6930B
Reel Size
13"
Tape width
12mm
Quantity
2500 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6930B Rev. A