FDS6699S Datasheet

IC型號：
FDS6699S
PDF描述：
30V N-Channel PowerTrench SyncFET
文件大?。?/label>
525.72KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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FDS6699S 30V N-Channel PowerTrench

廬

SyncFET鈩?/div>

January 2005

FDS6699S

30V N-Channel PowerTrench

廬

SyncFET鈩?/div>

Features

鈻?/div>

21 A, 30 V

Max R

DS(ON)

= 3.6 m

鈩?/div>

@ V

= 10 V

Max R

DS(ON)

= 4.5 m

鈩?/div>

@ V

= 4.5 V

鈻?/div>

Includes SyncFET Schottky body diode

鈻?/div>

High performance trench technology for extremely low

DS(ON)

and fast switching

鈻?/div>

High power and current handling capability

鈻?/div>

100% R

(Gate Resistance) tested

General Description

The FDS6699S is designed to replace a single SO-8 MOSFET

and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion

ef鏗乧iency, providing a low R

DS(ON)

and low gate charge. The

FDS6699S includes an integrated Schottky diode using Fair-

child鈥檚 monolithic SyncFET technology.

Applications

鈻?/div>

Synchronous Recti鏗乪r for DC/DC Converters 鈥?/div>

鈻?/div>

Notebook Vcore low side switch

鈻?/div>

Point of Load low side switch

SO-8

Absolute Maximum Ratings

=25擄C unless otherwise noted

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

鈥?Continuous

鈥?Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

, T

STG

胃

Operating and Storage Junction Temperature Range

(Note 1a)

Parameter

Ratings

鹵

105

2.5

1.2

鈥?5 to +125

Units

擄

C/W

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

FDS6699S

Device

FDS6699S

Reel Size

13鈥欌€?/div>

Tape width

12mm

Quantity

2500 units

漏2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDS6699S Rev. D

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®, SyncFET™
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
21A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
3.6 毫歐 @ 21A，10V
Id 時的 Vgs(th)（最大）
3V @ 1mA
閘電荷(Qg) @ Vgs
91nC @ 10V
輸入電容 (Ciss) @ Vds
3610pF @ 15V
功率 - 最大
1W
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SO
包裝
帶卷 (TR)
其它名稱
FDS6699S-NDFDS6699STR

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