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FDS6690 Datasheet

  • FDS6690

  • Single N-Channel Logic Level PWM Optimized PowerTrench MOSFE...

  • 204.96KB

  • 8頁

  • FAIRCHILD

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January 2000
FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench廬 MOSFET
General Description
This N Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching
PWM controllers.
The MOSFET features faster switching and lower gate charge
than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
Features
10 A, 30 V. R
DS(ON)
= 0.0135
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.0200
鈩?/div>
@ V
GS
= 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
D
D
S
FD 9 0
66
S
G
5
6
7
8
4
3
2
1
SO-8
pin
1
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless other wise noted
FDS6690
30
鹵20
(Note 1a)
Units
V
V
A
10
50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
1
-55 to 150
W
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
漏 1998 Fairchild Semiconductor Corporation
FDS6690 Rev.C

FDS6690 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 11 A

  • 0.0125 Ohms

  • Single Quad Drain Triple Source

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 10 ns

  • 48 S

  • - 55 C

  • 2.5 W

  • 13 ns

  • 2500

  • 38 ns

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