鈩?/div>
General Description
The FDS6680S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.
Features
鈥?/div>
11.5 A, 30 V.
R
DS(ON)
= 0.011
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.016
鈩?/div>
@ V
GS
= 4.5 V
鈥?/div>
鈥?/div>
鈥?/div>
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor drives
鈥?/div>
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵20
(Note 1a)
Units
V
V
A
W
11.5
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6680S
餂?000
Fairchild Semiconductor Corporation
Device
FDS6680S
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
FDS6680S Rev B (W)
FDS6680S 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET N 通道，金屬氧化物
邏輯電平門
30V
11.5A
11 毫歐 @ 11.5A，10V
3V @ 250µA
24nC @ 5V
2010pF @ 15V
1W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SOICN
帶卷 (TR)
FDS6680S相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
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