FDS6680A
November 2004
FDS6680A
Single N-Channel, Logic Level, PowerTrench
廬
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor鈥檚 advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
鈥?/div>
12.5 A, 30 V
R
DS(ON)
= 9.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 13 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Ultra-low gate charge
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
D
D
SO-8
D
D
D
D
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
T
A
=25 C unless otherwise noted
o
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
30
鹵20
(Note 1a)
Units
V
A
W
12.5
50
2.5
1.2
1.0
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
50
25
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6680A
Device
FDS6680A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2004
Fairchild Semiconductor Corporation
FDS6680A Rev F1(W)
FDS6680A相關(guān)型號PDF文件下載
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