鈻?/div>
High power and current handling capability
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
ef鏗乧iency, providing a low R
DS(ON)
and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fair-
child鈥檚 monolithic SyncFET technology.
Applications
鈻?/div>
DC/DC converter
鈻?/div>
Low side notebook
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
胃
JA
R
胃
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
鹵
20
14.5
50
2.5
1.2
1
鈥?5 to +150
Units
V
V
A
W
擄
C
擄
C/W
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking
FDS6676AS
FDS6676AS
Device
FDS6676AS
FDS6676AS_NL
(Note 3)
Reel Size
13鈥欌€?/div>
13鈥欌€?/div>
Tape width
12mm
12mm
Quantity
2500 units
2500 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6676AS Rev. A (X)
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