鈻?/div>
High power and current handling capability
General Description
This P-Channel MOSFET has been designed speci鏗乧ally to
improve the overall ef鏗乧iency of DC/DC converters using either
synchronous or conventional switching PWM controllers, and
battery chargers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
speci鏗?
cations.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall ef鏗乧iency.
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
胃
JA
R
胃
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
鈥?0
+25
鈥?4.5
鈥?0
2.5
1.2
1.0
鈥?5 to +175
Units
V
A
W
擄
C
擄
C/W
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking
FDS6673AZ
Device
FDS6673AZ
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6673AZ Rev. C(W)
next