FDS6609A
April 2000
PRELIMINARY
FDS6609A
P-Channel Logic Level PowerTrench
廬
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
鈥?/div>
鈥?.3 A, 鈥?0 V . R
DS(ON)
= 0.032
鈩?/div>
@ V
GS
= -10 V
R
DS(ON)
= 0.05
鈩?/div>
@ V
GS
= -4.5 V
鈥?/div>
Low gate charge
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Load switch
鈥?/div>
Motor Drive
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
鈥?0
鹵20
(Note 1a)
Units
V
V
A
W
-6.3
-40
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6609A
Device
FDS6609A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2000
Fairchild Semiconductor Corporation
FDS6609A Rev B(W)
FDS6609A 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET P 通道，金屬氧化物
邏輯電平門
30V
6.3A
32 毫歐 @ 7A，10V
3V @ 250µA
29nC @ 10V
930pF @ 15V
1W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SOICN
帶卷 (TR)
FDS6609A相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
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