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FDS5670 Datasheet

  • FDS5670

  • 60V N-Channel PowerTrench⑩ MOSFET

  • 251.59KB

  • 8頁

  • FAIRCHILD

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FDS5670
August 1999
FDS5670
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
聲
10 A, 60 V. R
DS(ON
)
= 0.014
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.017
鈩?/div>
@ V
GS
= 6 V.
聲
聲
聲
聲
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
D
D
D
D
5
6
4
3
2
1
SO-8
Symbol
V
DSS
V
GSS
I
D
P
D
S
S
S
G
7
8
T
A
= 25擄C unless otherwise noted
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
60
(Note 1a)
Units
V
V
A
W
鹵20
10
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS5670
Device
FDS5670
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
2500 units
錚?999
Fairchild Semiconductor Corporation
FDS5670 Rev. B

FDS5670 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 10A

  • 14 毫歐 @ 10A，10V

  • 4V @ 250µA

  • 70nC @ 10V

  • 2900pF @ 15V

  • 1W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • FDS5670TR

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