鈻?/div>
Battery protection
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor鈥檚 advanced PowerTrench process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V 鈥?20V).
D
D
D
D
5
6
4
3
2
1
SO-8
Pin 1
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
胃
JA
R
胃
JA
R
胃
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
鈥?0
鹵
20
鈥?.2
鈥?0
2.5
1.4
1.2
鈥?5 to +150
Units
V
V
A
W
擄
C
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4685
Device
FDS4685
Reel Size
13鈥?/div>
Tape width
12mm
Quantity
2500 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS4685 Rev. C(W)
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