FDS4488
December 2001
FDS4488
30V N-Channel PowerTrench
廬
MOSFET
General Description
This N
-Channel MOSFET is produced using Fairchild
Semiconductor鈥檚 advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance. These devices are well suited for low
voltage and battery powered applications where low in-
line power loss and fast switching are required.
Features
鈥?/div>
7.9 A, 30 V.
R
DS(ON)
= 22 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 30 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Low gate charge (9.5 nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Load switch
鈥?/div>
Motor drives
D
D
SO-8
DD
DD
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S G
S S
S S
S
T
A
=25
o
C unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
30
鹵25
(Note 1a)
Units
V
V
A
W
7.9
40
2.5
1.2
1.0
鈥?5 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
Package Marking and Ordering Information
Device Marking
FDS4488
Device
FDS4488
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2001
Fairchild Semiconductor Corporation
FDS4488 Rev B (W)
FDS4488相關(guān)型號PDF文件下載
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