FDS4410 Datasheet

IC型號(hào)：
FDS4410
PDF描述：
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOS...
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April 1998

FDS4410

Single N-Channel Logic Level PWM Optimized PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

The MOSFET features faster switching and lower gate

charge than other MOSFETs with comparable R

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency.

Features

10 A, 30 V. R

DS(ON)

= 0.0135

鈩?/div>

@ V

= 10 V

DS(ON)

= 0.0200

鈩?/div>

@ V

= 4.5 V.

Optimized for use in switching DC/DC converters

with PWM controllers.

Very fast switching .

Low gate charge (typical 22 nC).

SOT-23

SuperSOT

-6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

F D 10

SO-8

Absolute Maximum Ratings

Symbol

Parameter

= 25

C unless other wise noted

FDS4410

Units

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

鹵20

2.5

1.2

-55 to 150

STG

胃

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

FDS4410 Rev.B1

漏 1998 Fairchild Semiconductor Corporation

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
10A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
13.5 毫歐 @ 10A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
31nC @ 10V
輸入電容 (Ciss) @ Vds
1340pF @ 15V
功率 - 最大
1W
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)

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