鈻?/div>
High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor鈥檚 advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
5
6
4
3
2
1
SO-8
Pin 1
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
胃
JA
R
胃
JC
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
鹵
20
10
50
2.5
1.0
鈥?5 to +150
Units
V
V
A
W
擄
C
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Thermal Resistance, Junction-to-Case
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4410A
Device
FDS4410A
Reel Size
13"
Tape width
12mm
Quantity
2500 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS4410A Rev. B