餂?/div>
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
鈥?/div>
5 A, 100 V.
R
DS(ON)
= 0.059
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.066
鈩?/div>
@ V
GS
= 6 V
鈥?/div>
Fast switching speed.
鈥?/div>
Low gate charge
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability.
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor Driver
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
100
鹵
20
(Note 1a)
Units
V
V
A
W
5
40
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS3690
Device
FDS3690
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?999
Fairchild Semiconductor Corporation
FDS3690 Rev B(W)
FDS3690相關(guān)型號(hào)PDF文件下載
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