80V, 8.9A, 16m鈩?/div>
Features
鈥?r
DS(ON)
= 14m鈩?(Typ.), V
GS
= 10V, I
D
= 8.9A
鈥?Q
g(tot)
= 31nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?Optimized efficiency at high frequencies
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
Applications
鈥?Primary switch for Isolated DC/DC converters
鈥?Distributed Power and Intermediate Bus Architectures
鈥?High Voltage Synchronous Rectifier for DC Bus
Converters
Formerly developmental type 82663
Branding Dash
5
5
4
3
2
1
6
7
1
2
3
4
8
SO-8
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
胃JA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
胃JA
= 50
o
C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
8.9
5.6
Figure 4
515
2.5
20
-55 to 150
A
A
A
mJ
W
mW/
o
C
o
Parameter
Ratings
80
鹵20
Units
V
V
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
FDS3572
Device
FDS3572
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
漏2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A