FDS3512
May 2001
FDS3512
80V N-Channel PowerTrench
廬
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
4.0 A, 80 V
R
DS(ON)
= 70 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 80 m鈩?@ V
GS
= 6 V
鈥?/div>
Low gate charge (13nC Typical)
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Ratings
80
鹵20
4.0
30
2.5
1.2
1.0
鈥?5 to +175
Units
V
V
A
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS3512
Device
FDS3512
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?/div>
2001 Fairchild Semiconductor Corporation
FDS3512 Rev B1 (W)
FDS3512相關(guān)型號(hào)PDF文件下載
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