鈥?/div>
DC/DC converters
Telecom and Data-Com Distributed Power Architectures
48-volt I/P Half-Bridge/Full-Bridge
24-volt Forward and Push-Pull topologies
D
D
SO-8
D
D
D
D
D
D
5
6
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
7
8
MOSFET Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
胃JA
= 50
o
C/W)
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
V
GS
= 10V, R
胃JA
= 50
o
C/W)
Parameter
Ratings
150
鹵20
4.9
3.1
Figure 4
2.5
20
-55 to 150
Units
V
V
A
A
A
W
mW/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Case at 10 seconds
Thermal Resistance Junction to Case at steady state
(NOTE1)
(NOTE2)
(NOTE2)
25
50
85
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
FDS2572
Device
FDS2572
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
漏2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001