FDR8508P
March 1999
FDR8508P
Dual P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on state resistance and yet maintain low gate charge for
superior switching performance.
Features
聲
-3.0 A, -30 V.
聲
聲
聲
聲
R
DS(ON)
= 0.052鈩?@ V
GS
= -10V
R
DS(ON)
= 0.086鈩?@ V
GS
= -4.5V.
Low gate charge. (8nC typical).
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
Applications
聲
Load switch
聲
DC/DC converter
聲
Motor driving
D2
Small footprint (38% smaller than a standard SO-8);
聽聽聽聽low profile package (1 mm thick); power handling
聽聽聽聽capability similar to SO-8.
D1
D1
D2
5
6
S2
4
3
2
1
7
8
SuperSOT-8
pin #1
G1
S1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Power Dissipation
T
A
= 25擄C unless otherwise noted
Parameter
FDR8508P
-30
(Note 1a)
Units
V
V
A
W
擄C
鹵20
-3
-20
0.8
-55 to +150
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
156
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
.8508
Device
FDR8508P
Reel Size
13鈥?/div>
Tape Width
12mm
Quantity
3000 units
錚?999
Fairchild Semiconductor Corporation
FDR8508P Rev. C
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