FDR836P
April 1999
FDR836P
P-Channel 2.5V Specified MOSFET
General Description
SuperSOT
TM
-8 P-Channel enhancement mode power
field effect transistors are produced using Fairchild鈥檚
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to mini-
mize on-state resistance and provide superior switch-
ing performance. These devices are particularly suited
for low voltage applications such as battery powered
circuits or portable electronics where low in-line power
loss, fast switching and resistance to transients are
needed.
Features
鈥?/div>
-6.1 A, -20 V. R
DS(
ON
)
= 0.030
W
@ V
GS
= -4.5 V
R
DS(
ON)
= 0.040
W
@ V
GS
= -2.5 V
鈥?/div>
鈥?/div>
High density cell design for extremely low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
D
S
D
S
5
6
G
4
3
2
1
7
8
SuperSOT -8
TM
D
D
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
鹵
8
-6.1
-18
1.8
1.0
0.9
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄
C
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
擄
C/W
擄
C/W
Package Outlines and Ordering Information
Device Marking
Device
FDR836P
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
3000 units
.
836P
茫
1999 Fairchild Semiconductor Corporation
FDR836P, Rev. C
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