August 2000
FDR8321L
P-Channel MOSFET With Gate Driver For Load Switch Application
General Description
This device is designed for configuration as a load
switch and is particularly suited for Power
Management in portable battery powered electronic
equipment. Designed to operate from 2.5V to 8V input
and supply up to 2.9A. The device features a small
N-Channel MOSFET (Q1) together with a large
P-Channel power MOSFET (Q2) in a single
SuperSOT
TM
-8 package.
Features
V
DROP
= 0.2V @ V
IN
= 5V, I
L
= 2.9A. R
DS(ON)
= 0.070
鈩?/div>
V
DROP
= 0.2V @ V
IN
= 2.5V, I
L
= 2A. R
DS(ON)
= 0.105
鈩?
V
ON/OFF
Zener protection for ESD ruggedness (>6KV Human
Body Model).
High density cell design for extremely low on-resistance.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
V
OUT,
C
1,
C
O
5
6
7
8
Q2
4
3
EQUIVALENT CIRCUIT
V
IN
,R
1
,C
i
V
OUT,
C
1,
C
O
R
1
,R
2
,C
1
IN
+
V
DROP
-
OUT
R
2
Q1
2
1
C
1
,C
O
R
2
V
ON/OFF
O N / O FF
pin
1
SuperSOT -8
TM
See Application Circuit
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25擄C unless otherwise noted
FDR8321L
Units
V
IN
V
ON/OFF
I
L
Input Voltage Range
On/Off Voltage Range
Load Current @ V
DROP
= 0.2V - Continuous
- Pulsed
(Note 1)
2.5 - 8
1.5 - 8
2.9
10
(Note 2)
V
V
A
P
D
T
J
,T
STG
Maximum Power Dissipation
Operating and Storage Temperature Range
0.8
-55 to 150
W
擄C
THERMAL CHARACTERISTICS
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 2)
(Note 2)
156
40
擄C/W
擄C/W
漏2000 Fairchild Semiconductor International
FDR8321L Rev. C
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