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MOSFET

General Description

These N-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

Features

鈥?/div>

4.5 A, 20 V. R

DS(ON)

= 0.022

鈩?/div>

@ V

GS

= 4.5 V

R

DS(ON)

= 0.028

鈩?/div>

@ V

GS

= 2.5 V.

鈥?/div>

Low gate charge (16.2nC typical).

Fast switching speed.

High performance trench technology for extremely

low R

DS(ON)

.

Small footprint (38% smaller than a standard SO-8);low

profile package (1 mm thick); power handling capability

similar to SO-8.

Applications

鈥?/div>

Load switch

Motor driving

Power Management

D2

D1

D2

5

6

S2

4

3

2

1

7

8

SuperSOT -8

TM

G1

S1

G2

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

T

J

, T

stg

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

T

A

= 25擄C unless otherwise noted

Parameter

Ratings

20

鹵8

(Note 1a)

Units

V

A

W

擄C

4.5

20

0.8

-55 to +150

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

(Note 1a)

Thermal Characteristics

R

胃

JA

R

胃

JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

156

40

擄C/W

Package Marking and Ordering Information

Device Marking

.8305

Device

FDR8305N

Reel Size

13鈥欌€?/div>

Tape Width

12mm

Quantity

3000 units

錚?999

Fairchild Semiconductor Corporation

FD8305N Rev. C

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
2 個(gè) N 溝道（雙）
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
4.5A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
22 毫歐 @ 4.5A，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
23nC @ 4.5V
輸入電容 (Ciss) @ Vds
1600pF @ 10V
功率 - 最大
800mW
安裝類型
表面貼裝
封裝/外殼
8-SSOT，SuperSOT-8
供應(yīng)商設(shè)備封裝
8-SSOT
包裝
帶卷 (TR)

FDR8305N相關(guān)型號(hào)PDF文件下載

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FDR8305N Datasheet

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