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FDR6678A Datasheet

  • FDR6678A

  • 30V N-Channel PowerTrench MOSFET

  • 8頁

  • FAIRCHILD

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FDR6678A
April 2000
PRELIMINARY
FDR6678A
30V N-Channel PowerTrench
餂?/div>
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
鈥渉igh side鈥?synchronous rectifier operation, providing an
extremely low R
DS(ON)
and fast switching in a small
package.
Features
鈥?/div>
7.5 A, 30 V.
R
DS(ON)
= 24 m鈩?@ V
GS
= 4.5V
R
DS(ON)
= 20 m鈩?@ V
GS
= 10 V
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
Fast switching, low gate charge
鈥?/div>
High power and current in a smaller footprint than
SO-8
Applications
鈥?/div>
DC/DC converter
D
S
D
S
5
6
4
3
2
1
SuperSOT -8
TM
D
D
D
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵12
(Note 1a)
Units
V
V
A
W
7.5
40
1.8
1.0
0.9
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
.6678A
Device
FDR6678A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?000
Fairchild Semiconductor Corporation
FDR6678A Rev B(W)

FDR6678A 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 12 V

  • 7.5 A

  • Single Quint Drain Dual Source

  • + 150 C

  • SMD/SMT

  • SuperSOT-8

  • Reel

  • 9 ns

  • - 55 C

  • 1800 mW

  • 9 ns

  • 35 ns

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