FDR6580 Datasheet

IC型號(hào)：
FDR6580
PDF描述：
N-Chennal 2.5V Specified PowerTrench⑩ MOSFET
文件大?。?/label>
242.20KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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FDR6580

April 1999

ADVANCE INFORMATION

FDR6580

N-Chennal 2.5V Specified PowerTrench

MOSFET

General Description

This N-Channel 2.5V specified MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for superior

switching performance.

Features

聲

11 A, 20 V. R

DS(ON)

= 0.009

鈩?/div>

@ V

= 4.5 V

DS(ON)

= 0.013

鈩?/div>

@ V

= 2.5 V.

Low gate charge.

High performance trench technology for extremely

low R

DS(ON)

Small footprint (38% smaller than a standard SO-8); low

profile package (1 mm thick); power handling capability

similar to SO-8.

Applications

聲

Load switch

Motor driving

Power Management

SuperSOT -8

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

= 25擄C unless otherwise noted

Parameter

Ratings

(Note 1a)

Units

鹵

1.8

1.0

0.9

-55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

, T

stg

Operating and Storage Junction Temperature Range

擄

Thermal Characteristics

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄

C/W

擄

C/W

Package Outlines and Ordering Information

Device Marking

.6580

Device

FDR6580

Reel Size

13鈥欌€?/div>

Tape Width

12mm

Quantity

3000 units

錚?999

Fairchild Semiconductor Corporation

FDR6580, Rev. A

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
11.2A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
9 毫歐 @ 11.2A，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
48nC @ 4.5V
輸入電容 (Ciss) @ Vds
3829pF @ 10V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SSOT，SuperSOT-8
供應(yīng)商設(shè)備封裝
8-SSOT
包裝
帶卷 (TR)

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