FDPF51N25 28A, 250V N-Channel MOSFET
FDPF51N25
28A, 250V N-Channel MOSFET
Features
鈥?R
DS(on)
= 0.060
惟
@ V
GS
= 10 V
鈥?Low gate charge ( typical 55 nC)
鈥?Low C
rss
( typical 63 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
June 2006
TM
These N-Channel enhancement mode power field effect
transistorsare produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
GDS
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDPF51N25
250
28
16.8
112
鹵30
1111
28
11.7
4.5
117
0.93
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
--
--
Max.
1.07
62.5
Unit
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
FDPF51N25 Rev. A
1
www.fairchildsemi.com