30V, 54A, 11.6m鈩?/div>
Features
r
DS(ON)
= 14.5m鈩? V
GS
= 4.5V, I
D
= 40A
r
DS(ON)
= 11.6m鈩? V
GS
= 10V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
DRAIN
(FLANGE)
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
SOURCE
G
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
S
漏2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
1
www.fairchildsemicom