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FDP6670S Datasheet

  • FDP6670S

  • 30V N-Channel PowerTrench? SyncFET

  • 94.91KB

  • 6頁

  • FAIRCHILD

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FDP6670S/FDB6670S
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench
廬
SyncFET
鈩?/div>
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6670S includes
an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
鈥?/div>
31 A, 30 V.
R
DS(ON)
= 8.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 12.5 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (23nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
and fast switching
鈥?/div>
High power and current handling capability
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵20
(Note 1)
(Note 1)
Units
V
V
A
W
W/擄C
擄C
擄C
62
150
62.5
0.5
鈥?5 to +150
275
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8鈥?from case for 5 seconds
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.1
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB6670S
FDP6670S
Device
FDB6670S
FDP6670S
Reel Size
13鈥欌€?/div>
Tube
Tape width
24mm
n/a
Quantity
800 units
45
漏2001
Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)

FDP6670S 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 20 V

  • 0.041 A

  • 0.0085 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220

  • Tube

  • 35 ns

  • - 55 C

  • 150 W

  • 10 ns

  • 39 ns

FDP6670S相關(guān)型號PDF文件下載

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    廠商
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