FDP6644/FDB6644
June 2001
FDP6644/FDB6644
30V N-Channel PowerTrench
廬
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
50 A, 30 V.
R
DS(ON)
= 8.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 10.5 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Low gate charge (27 nC typical)
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
175擄C maximum junction temperature rating
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵
16
(Note 1)
(Note 1)
Units
V
V
A
A
W
W/擄C
擄C
50
150
83
0.55
-65 to +175
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB6644
FDP6644
Device
FDB6644
FDP6644
Reel Size
13鈥欌€?/div>
Tube
Tape width
24mm
n/a
Quantity
800 units
45
漏2001
Fairchild Semiconductor Corporation
FDP6644 Rev C(W)
FDP6644 產(chǎn)品屬性
Fairchild Semiconductor
N-Channel
30 V
+/- 16 V
50 A
0.0085 Ohms
Single
+ 175 C
Through Hole
TO-220
Tube
14 ns
- 65 C
83 W
8 ns
54 ns
FDP6644相關(guān)型號(hào)PDF文件下載
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型號(hào)
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