FDP6030BL Datasheet

IC型號(hào)：
FDP6030BL
PDF描述：
N-Channel Logic Level PowerTrench MOSFET
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FDP6030BL/FDB6030BL

July 2000

FDP6030BL/FDB6030BL

N-Channel Logic Level PowerTrench

餂?/div>

MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R

DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

Features

鈥?40 A, 30 V. R

DS(ON)

= 0.018

鈩?/div>

@ V

= 10 V

DS(ON)

= 0.024

鈩?/div>

@ V

= 4.5 V.

鈥?Critical DC electrical parameters specified at elevated

temperature.

鈥?Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

鈥?High performance trench technology for

extremely low R

DS(ON)

鈥?175擄C maximum junction temperature rating.

TO-220

FDP Series

= 25擄C unless otherwise noted

TO-263AB

FDB Series

Absolute Maximum Ratings

Symbol

DSS

GSS

, T

STG

胃

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current

Parameter

FDP6030BL

FDB6030BL

鹵

Units

擄

C/W

擄

C/W

- Continuous

- Pulsed

(Note 1)

120

0.36

-65 to +175

Total Power Dissipation @ T

= 25

擄

Derate above 25

擄

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.5

62.5

Package Marking and Ordering Information

Device Marking

FDB6030BL

FDP6030BL

Device

FDB6030BL

FDP6030BL

Reel Size

13鈥欌€?/div>

Tube

Tape Width

24mm

N/A

Quantity

800

錚?00

Fairchild Semiconductor International

FDP6030BL/FDB6030BL Rev.C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
50
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門(mén)
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
40A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
18 毫歐 @ 20A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
17nC @ 5V
輸入電容 (Ciss) @ Vds
1160pF @ 15V
功率 - 最大
60W
安裝類(lèi)型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220
包裝
管件

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