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FDP5690 Datasheet

  • FDP5690

  • 60V N-Channel PowerTrenchTM MOSFET

  • 16頁

  • FAIRCHILD

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FDP5690/FDB5690
July 2000
FDP5690/FDB5690
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
鈥?32 A, 60 V. R
DS(ON)
= 0.027
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.032
鈩?/div>
@ V
GS
= 6 V.
鈥?Critical DC electrical parameters specified at evevated
temperature.
鈥?Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
鈥?High performance trench technology for extremely low
R
DS(ON)
.
鈥?175擄C maximum junction temperature rating.
D
D
G
G
D
S
TO-220
FDP Series
G
S
T
C
= 25擄C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Parameter
FDP5690
60
鹵20
FDB5690
Units
V
V
A
W
W/擄C
擄C
- Continuous
- Pulsed
32
100
58
0.4
-65 to +175
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JC
R
胃
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.6
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB5690
FDP5690
錚?000
Fairchild Semiconductor International
Device
FDB5690
FDP5690
Reel Size
13鈥欌€?/div>
Tube
Tape Width
24mm
N/A
Quantity
800
45
FDP5690/FDB5690 Rev. C

FDP5690 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 32A

  • 27 毫歐 @ 16A，10V

  • 4V @ 250µA

  • 33nC @ 10V

  • 1120pF @ 25V

  • 58W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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