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FDP4030L Datasheet

  • FDP4030L

  • N-Channel Logic Level Enhancement Mode Field Effect Transist...

  • 5頁

  • FAIRCHILD

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March 1998
FDP4030L / FDB4030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC/DC converters and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
Features
20 A, 30 V. R
DS(ON)
= 0.035
鈩?/div>
@ V
GS
=10 V
R
DS(ON)
= 0.055
鈩?/div>
@ V
GS
=4.5V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175擄C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25擄C unless otherwise noted
FDP4030L
FDB4030L
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1)
(Note 1)
30
鹵20
20
60
37.5
0.25
-65 to 175
275
V
V
A
Total Power Dissipation @ T
C
= 25
擄
C
Derate above 25
擄
C
W
W/
擄
C
擄C
擄C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
R
胃
JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
4
62.5
擄
C/W
擄
C/W
漏 1998 Fairchild Semiconductor Corporation
FDP4030L Rev.B1

FDP4030L 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 20 A

  • 0.055 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220

  • Rail

  • 10 ns

  • - 65 C

  • 37.5 W

  • 8 ns

  • 20 ns

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