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FDP4020P Datasheet

  • FDP4020P

  • P-Channel 2.5V Specified Enhancement Mode Field Effect Trans...

  • 7頁(yè)

  • FAIRCHILD

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FDP4020P
February 1999
PRELIMINARY
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been
designed for use as a linear pass element for low voltage
outputs. In addition, the part may be used as a low voltage
load switch when switching outputs on or off for power
management.The part may also be used in conjunction
with DC-DC converters requiring P-Channel.
Features
鈥?-16 A, -20 V. R
DS(on)
= 0.08
鈩?/div>
@ V
GS
= -4.5 V
R
DS(on)
= 0.11
鈩?/div>
@ V
GS
= -2.5 V.
鈥?Critical DC electrical parameters specified at elevated
temperature.
鈥?High density cell design for extremely low R
DS(on)
.
鈥?TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
鈥?175擄C maximum junction temperature rating.
S
G
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
JC
R
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
FDP4020P
-20
8
-16
-48
37.5
FDB4020P
Units
V
V
A
W
W/
C
C
C/W
C/W
Total Power Dissipation @ T
C
= 25
C
Derate above 25
C
Operating and Storage Junction Temperature Range
0.25
-65 to +175
Thermal Characteristics
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
4
62.5
40
Package Outlines and Ordering Information
Device Marking
FDP4020P
Device
FDP4020P
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
2500 units
漏1999
Fairchild Semiconductor Corporation
FDP4020P Rev. A

FDP4020P 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道,金屬氧化物

  • 邏輯電平門

  • 20V

  • 16A

  • 80 毫歐 @ 8A,4.5V

  • 1V @ 250µA

  • 13nC @ 4.5V

  • 665pF @ 10V

  • 37.5W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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