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FDP3672 Datasheet

  • FDP3672

  • N-Channel PowerTrench MOSFET 105V, 41A, 33mз

  • 10頁(yè)

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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FDP3672
September 2003
FDP3672
N-Channel PowerTrench
廬
MOSFET
105V, 41A, 33m鈩?/div>
Features
鈥?r
DS(ON)
= 25m鈩?(Typ.), V
GS
= 10V, I
D
= 41A
鈥?Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?Optimized efficiency at high frequencies
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Applications
鈥?DC/DC converters and Off-Line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V Systems
鈥?High Voltage Synchronous Rectifier
鈥?Direct Injection / Diesel Injection Systems
鈥?42V Automotive Load Control
鈥?Electronic Valve Train Systems
Formerly developmental type 82760
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
G
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 10V, R
胃JA
=
62
o
C/W)
41
31
5.9
Figure 4
48
135
0.9
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
Parameter
Ratings
105
鹵20
Units
V
V
C
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
1.11
62
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2003 Fairchild Semiconductor Corporation
FDP3672 Rev. A3

FDP3672 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 105V

  • 41A

  • 33 毫歐 @ 41A，10V

  • 4V @ 250µA

  • 37nC @ 10V

  • 1670pF @ 25V

  • 135W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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