餂?/div>
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 150V MOSFETs with low on-resistance and
fast switching will benefit.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
22 A, 150 V.
R
DS(ON)
= 80 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 90 m鈩?@ V
GS
= 6 V
鈥?/div>
Low gate charge (40nC typical)
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
175擄C maximum junction temperature rating
D
D
G
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
150
鹵
20
(Note 1)
(Note 1)
Units
V
V
A
A
W
W擄/C
擄C
22
50
93
0.63
鈥?5 to +175
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB2570
FDP2570
Device
FDB2570
FDP2570
Reel Size
13鈥欌€?/div>
Tube
Tape width
24mm
n/a
Quantity
800 units
45 units
餂?001
Fairchild Semiconductor Corporation
FDP2570/FDB2570 Rev C(W)
FDP2570 產品屬性
400
分離式半導體產品
FET - 單
PowerTrench®
MOSFET N 通道，金屬氧化物
邏輯電平門
150V
22A
80 毫歐 @ 11A，10V
4V @ 250µA
56nC @ 10V
1911pF @ 75V
93W
通孔
TO-220-3
TO-220AB
管件
FDP2570相關型號PDF文件下載
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型號
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描述
廠商
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