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FDP24AN06LA0 Datasheet

  • FDP24AN06LA0

  • N-Channel PowerTrench MOSFET 60V, 36A, 24mohm

  • 11頁

  • FAIRCHILD

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FDB24AN06LA0 / FDP24AN06LA0
January 2004
FDB24AN06LA0 / FDP24AN06LA0
N-Channel PowerTrench
廬
MOSFET
60V, 36A, 24m鈩?/div>
Features
鈥?r
DS(ON)
= 20m鈩?(Typ.), V
GS
= 5V, I
D
= 36A
鈥?Q
g
(tot) = 16nC (Typ.), V
GS
= 5V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 83547
Applications
鈥?Motor / Body Load Control
鈥?ABS Systems
鈥?Powertrain Management
鈥?Injection Systems
鈥?DC-DC converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
D
SOURCE
GATE
G
S
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 25 C, V
GS
= 5V)
Continuous (T
C
= 100 C, V
GS
= 5V)
Continuous (T
A
= 25 C, V
GS
= 5V, R
胃JA
= 43 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
o
o
Parameter
Ratings
60
鹵20
40
36
25
7.8
Figure 4
36
75
0.5
-55 to 175
Units
V
V
A
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
2.0
62
43
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certificatio
n.
漏2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A

FDP24AN06LA0 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 40A

  • 19 毫歐 @ 40A，10V

  • 3V @ 250µA

  • 21nC @ 5V

  • 1850pF @ 25V

  • 75W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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