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FDP18N50 Datasheet

  • FDP18N50

  • 500V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FDP18N50 / FDPF18N50 500V N-Channel MOSFET
October 2006
FDP18N50 / FDPF18N50
500V N-Channel MOSFET
Features
鈥?18A, 500V, R
DS(on)
= 0.265鈩?@V
GS
= 10 V
鈥?Low gate charge ( typical 45 nC)
鈥?Low C
rss
( typical 25 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDP18N50
500
18
10.8
72
鹵30
945
18
23
4.5
235
1.88
FDPF18N50
18
*
10.8
*
72
*
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
58
0.47
-55 to +150
300
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP18N50
0.53
0.5
62.5
FDPF18N50
2.15
--
62.5
Unit
擄C/W
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP18N50 / FDPF18N50 Rev. A

FDP18N50 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 500V

  • 18A

  • 265 毫歐 @ 9A，10V

  • 5V @ 250µA

  • 60nC @ 10V

  • 2860pF @ 25V

  • 235W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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