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FDN5630 Datasheet

  • FDN5630

  • 60V N-Channel PowerTrench MOSFET

  • 8頁

  • FAIRCHILD

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FDN5630
March 2000
FDN5630
60V N-Channel PowerTrench
錚?/div>
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low R
DS(ON)
in a small SOT23
footprint. Fairchild鈥檚 PowerTrench technology provides
faster switching than other MOSFETs with comparable
R
DS(ON)
specifications. The result is higher overall
efficiency with less board space.
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.7 A, 60 V. R
DS(ON)
= 0.100
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.120
鈩?/div>
@ V
GS
= 6 V.
Optimized for use in high frequency DC/DC converters.
Low gate charge.
Very fast switching.
SuperSOT
TM
- 3 provides low R
DS(ON)
in SOT23 footprint.
Applications
鈥?/div>
鈥?/div>
DC/DC converter
Motor drives
D
D
S
SuperSOT -3
TM
G
T
A
= 25 C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
60
鹵20
(Note 1a)
Units
V
V
A
W
擄C
1.7
10
0.5
0.46
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
5630
Device
FDN5630
Reel Size
7
Tape Width
8mm
Quantity
3000 units
錚?000
Fairchild Semiconductor Corporation
FDN5630 Rev. C

FDN5630 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 3,000

  • 分離式半導體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 1.7A

  • 100 毫歐 @ 1.7A，10V

  • 3V @ 250µA

  • 10nC @ 10V

  • 400pF @ 15V

  • 460mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • 3-SSOT

  • 帶卷 (TR)

  • FDN5630TR

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