鈩?/div>
General Description
The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor鈥檚 monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Features
鈥?/div>
2.6 A, 30 V.
R
DS(ON)
= 40 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 50 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Low gate charge
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
Applications
鈥?/div>
鈥?/div>
DC-DC Converter
Motor Drives
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
30
鹵
16
(Note 1a)
Units
V
V
A
W
擄C
2.6
10
0.5
0.46
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
372
Device
FDN372S
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
餂?002
Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S相關(guān)型號PDF文件下載
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