鈥?/div>
RoHS Compliant
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset
and
other
ultra-portable
applications.
It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1
D1
D2
D2
S1
G1
1
2
3
6
5
4
D1
G2
S2
D1 G2 S2
MicroFET 2x2
D2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
鹵12
(Note 1a)
Units
V
V
A
W
擄C
3.7
6
1.4
0.7
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
擄C/W
Package Marking and Ordering Information
Device Marking
028
Device
Reel Size
7鈥欌€?/div>
FDMA1028NZ
Tape width
8mm
Quantity
3000 units
漏2008
Fairchild Semiconductor Corporation
FDMA1028NZ Rev B2 (W)
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