FDMA1027P Dual P-Channel PowerTrench廬 MOSFET
October 2005
FDMA1027P
Dual P-Channel PowerTrench
廬
MOSFET
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to
linear mode applications.
PIN 1
S1 G1
D1
D2
G1
D2
D2
S1
Features
鈥?/div>
鈥?.0 A, 鈥?0V. R
DS(ON)
= 120 m鈩?@ V
GS
= 鈥?.5V
R
DS(ON)
= 160 m鈩?@ V
GS
= 鈥?.5V
R
DS(ON)
= 240 m鈩?@ V
GS
= 鈥?.8V
鈥?/div>
Low profile 鈥?0.8 mm maximum 鈥?in the new package
MicroFET 2x2 mm
1
2
3
6
5
4
D1
G2
S2
D1 G2 S2
MicroFET
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
鈥?0
鹵8
(Note 1a)
Units
V
V
A
W
擄C
鈥?.2
鈥?
1.4
0.7
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
擄C/W
Package Marking and Ordering Information
Device Marking
027
Device
FDMA1027P
Reel Size
7 in
Tape width
8 mm
Quantity
3000 units
漏2005
Fairchild Semiconductor Corporation
FDMA1027P Rev C1 (W)
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