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FDM606P

July 2002

FDM606P

P-Channel 1.8V Logic Level Power Trench

廬

MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor鈥檚 advanced PowerTrench process that has

been especially tailored to minimize the on-state resistance

and yet maintain low gate charge for superior switching

performance. These devices are well suited for portable

electronics applications.

Features

鈥?Fast switching

鈥?r

DS(ON)

= 0.026鈩?(Typ), V

GS

= -4.5V

鈥?r

DS(ON)

= 0.033鈩?(Typ), V

GS

= -2.5V

鈥?r

DS(ON)

= 0.052鈩?(Typ), V

GS

= -1.8V

Applications

鈥?Load switch

鈥?Battery charge

鈥?Battery disconnect circuits

D

Bottomview 3 X 2 (8 Lead)

SinglePad

ShortPin

D

G

D

D

1

2

8

7

6

5

1

D

D

D

3

4

S

S

MicroFET 3x2-8

MOSFET Maximum Ratings

T

A

=25擄C unless otherwise noted

Symbol

V

DSS

V

GS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T

C

= 25

o

C, V

GS

= - 4.5V)

I

D

Continuous (T

C

= 100 C, V

GS

= - 2.5V)

Continuous (T

C

= 100 C, V

GS

= -1.8V)

Pulsed

P

D

T

J

, T

STG

Power dissipation

Derate above 25擄C

Operating and Storage Temperature

o

o

Parameter

Ratings

-20

鹵8

-6.8

-3.8

-3.0

Figure 4

1.92

15.4

-55 to 150

Units

V

V

A

A

A

W

mW/

o

C

o

C

Thermal Characteristics

R

胃JC

R

胃JA

Thermal Resistance Junction to Case (Note1)

Thermal Resistance Junction to Ambient (Note 2)

6.0

65

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking

.06P

Device

FDM606P

Package

MicroFET3x2

Reel Size

178 mm

Tape Width

8 mm

Quantity

3000

漏2002 Fairchild Semiconductor Corporation

FDM606P Rev. C

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